Trina Solar has set a new global benchmark by achieving 27.08% efficiency for its n-type fully passivated heterojunction (HJT) solar cell, verified by the Institute for Solar Energy Research in Hamelin (ISFH).
The breakthrough leverages Trina Solar’s advanced thin-film passivation technology, featuring 210mm×105mm half-cut, phosphorus-doped n-type silicon wafers crafted using the Czochralski process. Enhanced rear-side passivation, optimized multi-frequency RF doping for microcrystalline systems, and ultra-fine line printing technologies contributed to this remarkable advancement in optical and electrical efficiency.
“This achievement underscores our commitment to innovation in passivated contact cells and modules, bolstering our industry leadership,” stated Gao Jifan, Chairman and CEO of Trina Solar.
This marks Trina Solar’s 29th world record in solar cell efficiency and represents a landmark in bifacial contact technology, surpassing the 27% efficiency threshold for the first time. It follows recent records of 25.9% and 26.58% efficiency set in late 2023 for n-type monocrystalline tunnel oxide passivated contact (TOPCon) cells.
The 27.08% HJT efficiency milestone reinforces Trina Solar’s position at the forefront of photovoltaic innovation, excelling in both high- and low-temperature passivated contact technologies.
